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CSD17312Q5 Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD17312Q5 Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 TC = 25°C TC = 125°C G006 ID = 35A Qg - Gate Charge - nC 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 G003 ID = 35A VDS = 15V CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 28 nC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 6 nC • Low Thermal Resistance VGS = 3V 1.8 m Ω • Avalanche Rated RDS(on) Drain to Source On Resistance VGS = 4.5V 1.4 m Ω VGS = 8V 1.2 m Ω • Pb Free Terminal Plating VGS(th) Threshold Voltage 1.1 V • RoHS Compliant • Halogen Free ORDERING INFORMATION • SON 5-mm × 6-mm Plastic Package Device Package Media Qty Ship SON 5-mm × 6-mm 13-Inch Tape and CSD17312Q5 2500 APPLICATIONS Plastic Package Reel Reel • Notebook Point-of-Load • Point-of-Load Synchronous Buck in ABSOLUTE MAXIMUM RATINGS Networking, Telecom and Computing Systems TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V DESCRIPTION VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A The NexFET™ power MOSFET has been designed ID Continuous Drain Current(1) 38 A to minimize losses in power conversion applications and optimized for 5V gate drive applications. IDM Pulsed Drain Current, TA = 25°C (2) 200 A PD Power Dissipation(1) 3.2 W Top View TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, Single Pulse EAS 845 mJ ID = 130A, L = 0.1mH, RG = 25Ω (1) Typical RqJA = 39°C/W when mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing Text_added_for_spacing_Text_added_for_spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Numéro de pièce similaire - CSD17312Q5_11 |
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Description similaire - CSD17312Q5_11 |
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