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CSD17312Q5 Fiches technique(PDF) 1 Page - Texas Instruments

No de pièce CSD17312Q5
Description  30V N-Channel NexFET??Power MOSFET
Download  11 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17312Q5 Fiches technique(HTML) 1 Page - Texas Instruments

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background image
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0094-01
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
TC = 25°C
TC = 125°C
G006
ID = 35A
Qg - Gate Charge - nC
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
G003
ID = 35A
VDS = 15V
CSD17312Q5
www.ti.com
SLPS256A – MARCH 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17312Q5
PRODUCT SUMMARY
1
FEATURES
VDS
Drain to Source Voltage
30
V
2
Optimized for 5V Gate Drive
Qg
Gate Charge Total (4.5V)
28
nC
Ultra Low Qg and Qgd
Qgd
Gate Charge Gate to Drain
6
nC
Low Thermal Resistance
VGS = 3V
1.8
m
Avalanche Rated
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
1.4
m
VGS = 8V
1.2
m
Pb Free Terminal Plating
VGS(th)
Threshold Voltage
1.1
V
RoHS Compliant
Halogen Free
ORDERING INFORMATION
SON 5-mm × 6-mm Plastic Package
Device
Package
Media
Qty
Ship
SON 5-mm × 6-mm
13-Inch
Tape and
CSD17312Q5
2500
APPLICATIONS
Plastic Package
Reel
Reel
Notebook Point-of-Load
Point-of-Load Synchronous Buck in
ABSOLUTE MAXIMUM RATINGS
Networking, Telecom and Computing Systems
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
30
V
DESCRIPTION
VGS
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
100
A
The NexFET™ power MOSFET has been designed
ID
Continuous Drain Current(1)
38
A
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
IDM
Pulsed Drain Current, TA = 25°C
(2)
200
A
PD
Power Dissipation(1)
3.2
W
Top View
TJ,
Operating Junction and Storage
–55 to 150
°C
TSTG
Temperature Range
Avalanche Energy, Single Pulse
EAS
845
mJ
ID = 130A, L = 0.1mH, RG = 25Ω
(1) Typical
RqJA = 39°C/W when mounted on a 1-inch
2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration
≤300ms, duty cycle ≤2% TextAddedForSpacing
Text_added_for_spacing_Text_added_for_spacing
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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