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TC7WG02FU Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce TC7WG02FU
Description  Dual 2-Input NOR Gate
Download  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7WG02FU Fiches technique(HTML) 4 Page - Toshiba Semiconductor

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TC7WG02FU/FK
2009-09-18
4
AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40 to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ
Max
Min
Max
Unit
0.9
19.8
1.1 to 1.3
10.1
18.7
1.0
34.5
1.4 to 1.6
5.9
8.9
1.0
10.8
1.65 to 1.95
4.5
6.4
1.0
6.9
2.3 to 2.7
3.1
4.2
1.0
4.7
CL = 10 pF,
RL = 1 MΩ
3.0 to 3.6
2.3
3.4
1.0
4.0
0.9
22.5
1.1 to 1.3
11.6
21.5
1.0
37.2
1.4 to 1.6
6.6
9.8
1.0
12.0
1.65 to 1.95
5.0
7.1
1.0
7.3
2.3 to 2.7
3.5
4.5
1.0
5.1
CL = 15 pF,
RL = 1 MΩ
3.0 to 3.6
2.8
3.8
1.0
4.4
0.9
30.0
1.1 to 1.3
15.0
29.6
1.0
56.0
1.4 to 1.6
8.5
13.1
1.0
15.9
1.65 to 1.95
6.3
9.2
1.0
9.6
2.3 to 2.7
4.3
5.7
1.0
6.1
Propagation delay time
tpLH
tpHL
CL = 30 pF,
RL = 1 MΩ
3.0 to 3.6
3.5
4.4
1.0
4.8
ns
Input capacitance
CIN
3.6
3
pF
Power dissipation
capacitance
CPD
(Note 13)
0.9 to 3.6
11
pF
Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC/2


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