TC4W66F/FU

2007-11-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC4W66F,TC4W66FU

Dual Bilateral Switch

The TC4W66 contains two independence circuits of

bidirectional switches.

When control input CONT is set to “H” level, the impedance

between input and output of the switch becomes low and when it

is set to “L” level, the switch becomes high. This can be applied

for switching of analog signals and digital signals.

Features

250

110

70

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Unit

DC supply voltage

V

Control input voltage

V

Switch I/O voltage

V

Power dissipation

300

mW

Potential difference across I/O during

ON

±0.5

V

Control input current

±10

mA

Operating temperature range

−40 to 85

°C

Storage temperature

−65 to 150

°C

Lead temp./time

260°C/10 s

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

TC4W66F

TC4W66FU

TC4W66F

TC4W66FU

Weight

SOP8-P-1.27: 0.05 g (typ.)

SSOP8-P-0.65: 0.02 g (typ.)