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TC4W66F Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TC4W66F Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page TC4W66F/FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4W66F,TC4W66FU Dual Bilateral Switch The TC4W66 contains two independence circuits of bidirectional switches. When control input CONT is set to “H” level, the impedance between input and output of the switch becomes low and when it is set to “L” level, the switch becomes high. This can be applied for switching of analog signals and digital signals. Features • ON-resistance, RON 250 Ω (typ.)................... VDD − VSS = 5 V 110 Ω (typ.)................... VDD − VSS = 10 V 70 Ω (typ.)..................... VDD − VSS = 15 V • OFF-resistance, ROFF ROFF (typ.) > 109 Ω Absolute Maximum Ratings Characteristics Symbol Rating Unit DC supply voltage VDD VSS − 0.5 to VSS + 20 V Control input voltage VC IN VSS − 0.5 to VDD + 0.5 V Switch I/O voltage VI/O VSS − 0.5 to VDD + 0.5 V Power dissipation PD 300 mW Potential difference across I/O during ON VI-VO ±0.5 V Control input current IC IN ±10 mA Operating temperature range Topr −40 to 85 °C Storage temperature Tstg −65 to 150 °C Lead temp./time TL 260°C/10 s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TC4W66F TC4W66FU TC4W66F TC4W66FU Weight SOP8-P-1.27: 0.05 g (typ.) SSOP8-P-0.65: 0.02 g (typ.) |
Numéro de pièce similaire - TC4W66F_08 |
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Description similaire - TC4W66F_08 |
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