Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STP4403 Fiches technique(PDF) 1 Page - Stanson Technology

No de pièce STP4403
Description  STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STANSON [Stanson Technology]
Site Internet  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4403 Fiches technique(HTML) 1 Page - Stanson Technology

  STP4403 Datasheet HTML 1Page - Stanson Technology STP4403 Datasheet HTML 2Page - Stanson Technology STP4403 Datasheet HTML 3Page - Stanson Technology STP4403 Datasheet HTML 4Page - Stanson Technology STP4403 Datasheet HTML 5Page - Stanson Technology STP4403 Datasheet HTML 6Page - Stanson Technology  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
STP
STP
STP
STP4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4403 2010. V1
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP4403 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN
PIN
PIN
PIN CONFIGURATION
CONFIGURATION
CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
MARKING
MARKING
MARKING
SOP-8
SOP-8
SOP-8
SOP-8
Y:Year
Y:Year
Y:Year
Y:Year Code
Code
Code
Code
A:Process
A:Process
A:Process
A:Process Code
Code
Code
Code
FEATURE
FEATURE
FEATURE
FEATURE
-20V/-10.0A, R
DS(ON) = 20mΩ
@VGS = -4.5V
-20V/-8.6A, RDS(ON) = 25mΩ
@VGS = -2.5V
-20V/-7.6A, R
DS(ON) = 35mΩ
@VGS = -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design


Numéro de pièce similaire - STP4403

FabricantNo de pièceFiches techniqueDescription
logo
Stanson Technology
STP4407 STANSON-STP4407 Datasheet
545Kb / 6P
   The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
logo
VBsemi Electronics Co.,...
STP4407 VBSEMI-STP4407 Datasheet
898Kb / 9P
   P-Channel 30-V (D-S) MOSFET
logo
SHENZHEN DOINGTER SEMIC...
STP4407A DOINGTER-STP4407A Datasheet
1Mb / 5P
   P-Channel MOSFET uses advanced trench technology
logo
VBsemi Electronics Co.,...
STP4407A VBSEMI-STP4407A Datasheet
898Kb / 9P
   P-Channel 30-V (D-S) MOSFET
More results

Description similaire - STP4403

FabricantNo de pièceFiches techniqueDescription
logo
Stanson Technology
STP9434 STANSON-STP9434 Datasheet
314Kb / 6P
   STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9235 STANSON-STP9235 Datasheet
331Kb / 6P
   STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP4931 STANSON-STP4931 Datasheet
334Kb / 6P
   STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STN9926 STANSON-STN9926 Datasheet
648Kb / 7P
   The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STN4488L STANSON-STN4488L Datasheet
644Kb / 7P
   STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
STN9926AA STANSON-STN9926AA Datasheet
233Kb / 7P
   The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
ST2319SRG STANSON-ST2319SRG Datasheet
229Kb / 8P
   ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4407 STANSON-STP4407 Datasheet
545Kb / 6P
   The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
logo
ACE Technology Co., LTD...
ACE632 ACE-ACE632 Datasheet
1Mb / 11P
   The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
VER 1.3
logo
Shenzhen Huazhimei Semi...
HM1P10MR HMSEMI-HM1P10MR Datasheet
763Kb / 5P
   P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com