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J111 Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce J111
Description  JFET Chopper Transistors N.Channel . Depletion
Download  5 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

J111 Fiches technique(HTML) 3 Page - ON Semiconductor

  J111_12 Datasheet HTML 1Page - ON Semiconductor J111_12 Datasheet HTML 2Page - ON Semiconductor J111_12 Datasheet HTML 3Page - ON Semiconductor J111_12 Datasheet HTML 4Page - ON Semiconductor J111_12 Datasheet HTML 5Page - ON Semiconductor  
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J111, J112
http://onsemi.com
3
1000
1.0
2.0
5.0
10
20
50
100
200
500
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
ID, DRAIN CURRENT (mA)
Figure 1. Turn−On Delay Time
RK = 0
TJ = 25°C
J111
J112
J113
VGS(off) = 12 V
= 7.0 V
= 5.0 V
RK = RD
1000
1.0
2.0
5.0
10
20
50
100
200
500
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
ID, DRAIN CURRENT (mA)
Figure 2. Rise Time
RK = RD
RK = 0
TJ = 25°C
J111
J112
J113
VGS(off) = 12 V
= 7.0 V
= 5.0 V
1000
1.0
2.0
5.0
10
20
50
100
200
500
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
ID, DRAIN CURRENT (mA)
Figure 3. Turn−Off Delay Time
RK = RD
RK = 0
TJ = 25°C
J111
J112
J113
VGS(off) = 12 V
= 7.0 V
= 5.0 V
1000
1.0
2.0
5.0
10
20
50
100
200
500
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
ID, DRAIN CURRENT (mA)
Figure 4. Fall Time
RK = RD
RK = 0
TJ = 25°C
J111
J112
J113
VGS(off) = 12 V
= 7.0 V
= 5.0 V
TYPICAL SWITCHING CHARACTERISTICS
NOTE 1
The switching characteristics shown above were measured using a test
circuit similar to Figure 5. At the beginning of the switching interval,
the gate voltage is at Gate Supply Voltage (−VGG). The Drain−Source
Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due
to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or
Gate−Drain Capacitance (Cgd) is charged to VGG + VDS.
During the turn−on interval, Gate−Source Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd must
discharge to VDS(on) through RG and RK in series with the parallel
combination of effective load impedance (R
D) and Drain−Source
Resistance (rds). During the turn−off, this charge flow is reversed.
Predicting turn−on time is somewhat difficult as the channel resistance
rds is a function of the gate−source voltage. While Cgs discharges, VGS
approaches zero and rds decreases. Since Cgd discharges through rds,
turn−on time is non−linear. During turn−off, the situation is reversed
with rds increasing as Cgd charges.
The above switching curves show two impedance conditions; 1) RK
is equal to RD, which simulates the switching behavior of cascaded
stages where the driving source impedance is normally the load
impedance of the previous stage, and 2) RK = 0 (low impedance) the
driving source impedance is that of the generator.
RGEN
50
W
VGEN
INPUT
RK
50
W
RGG
VGG
50
W
OUTPUT
RD
+VDD
RT
SET VDS(off) = 10 V
INPUT PULSE
tr
tf
PULSE WIDTH
DUTY CYCLE
≤ 0.25 ns
≤ 0.5 ns
= 2.0
ms
≤ 2.0%
RGG & RK
RD +
RD(RT ) 50)
RD ) RT ) 50
Figure 5. Switching Time Test Circuit


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