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SI8469DB Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI8469DB
Description  P-Channel 8 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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SI8469DB Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 67091
S10-2539-Rev. A, 08-Nov-10
Vishay Siliconix
Si8469DB
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t = 10 s
RthJA
55
70
°C/W
Maximum Junction-to-Ambientc, d
t = 10 s
125
160
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 8
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 6.4
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
2.4
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.35
- 0.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
- 1
µA
VDS = - 8 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
- 10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 1.5 A
0.052
0.064
VGS = - 2.5 V, ID = - 1 A
0.062
0.076
VGS = - 1.5 V, ID = - 0.3 A
0.085
0.115
VGS = - 1.2 V, ID = - 0.3 A
0.110
0.180
Forward Transconductancea
gfs
VDS = - 4 V, ID = - 1.5 A
12
S
Dynamicb
Input Capacitance
Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
900
pF
Output Capacitance
Coss
315
Reverse Transfer Capacitance
Crss
260
Total Gate Charge
Qg
VDS = - 4 V, VGS = - 4.5 V, ID = - 1.5 A
11
17
nC
Gate-Source Charge
Qgs
0.85
Gate-Drain Charge
Qgd
2.5
Gate Resistance
Rg
VGS = - 0.1 V, f = 1 MHz
6
Turn-On Delay Time
td(on)
VDD = - 4 V, RL = 2.7 
ID  - 1.5 A, VGEN = - 4.5 V, Rg = 1 
15
30
ns
Rise Time
tr
22
45
Turn-Off Delay Time
td(off)
35
70
Fall Time
tf
17
35
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TA = 25 °C
- 1.5
A
Pulse Diode Forward Current
ISM
- 15
Body Diode Voltage
VSD
IS = - 1.5 A, VGS = 0 V
- 0.9
- 1.3
V
Body Diode Reverse Recovery Time
trr
IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
10
20
nC
Reverse Recovery Fall Time
ta
10
ns
Reverse Recovery Rise Time
tb
15


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