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TPIC2406 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPIC2406 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 13 page TPIC2406 INTELLIGENT POWER QUAD MOSFET LATCH SLIS012 − D3378, FEBRUARY 1990 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001 2−3 schematics of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC Input GND GND DRAIN CLAMP Voltage Regulator absolute maximum ratings over −40 °C to 125°C case temperature range (unless otherwise noted) Logic supply voltage, VCC (see Note 1) 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power MOSFET driver supply voltage, VDD 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage, VI 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power MOSFET drain-source voltage, VDS 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output voltage at F, VO 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clamp-diode voltage 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-drain diode anode current 1.25 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed source-drain diode anode current 6 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, ID1 = ID2 = ID3 = ID4, TA = 25°C (see Note 2 and Figures 5 through 8) 3 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, ID1 = ID2 = ID3 = ID4, TA = 25°C 770 mA . . . . . . . . . . Peak drain current, single output, IDM, TA = 25°C (see Note 3) 12.5 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS 50 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation at or below 25 °C free-air temperature (see Note 4) 2.5 W . . . . . . . . . . . . . . . . . . Continuous total dissipation at or below 100 °C case temperature (see Note 4) 6 W . . . . . . . . . . . . . . . . . . . . . Operating junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NOTES: 1. All voltage values are with respect to the five ground (GND and LGND) terminals connected together. 2. Pulse duration = 10 ms, duty cycle = 6%. 3. Pulse duration ≤ 100 µs, duty cycle ≤ 2%. 4. For operation above 25 °C free-air temperature, derate linearly at the rate of 20 mW/°C. For operation above 100°C case temperature, derate linearly at the rate of 120 mW/ °C. To avoid exceeding the design maximum junction temperature, these ratings should not be exceeded. Due to variations in individual devices, electrical characteristics, and thermal resistance, the built-in thermal overload protection can be activated at power levels slightly above or below the rated dissipation. |
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