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TPS54386TPWPRQ1 Fiches technique(PDF) 4 Page - Texas Instruments |
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TPS54386TPWPRQ1 Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 50 page TPS54386-Q1 SLUSAZ9A – MARCH 2012 – REVISED MARCH 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) –40°C ≤ TA ≤ 105°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BOOTSTRAP RBOOT1 From BP to BOOT1 or BP to BOOT2, Bootstrap switch resistance 18 Ω IEXT = 50 mA RBOOT2 OUTPUT STAGE (Channel 1 and Channel 2) TA = 25°C, VPVDD2 = 8 V 85 rDS(on) (3) MOSFET on-resistance plus bond-wire resistance m Ω –40°C < TA < 125°C, VPVDD2 = 8 V 85 165 tON(min) (3) Minimum controllable pulse duration ISWx peak current > 1 A (4) 100 200 ns DMIN Minimum duty cycle VFB = 0.9 V 0% DMAX Maximum duty cycle fSW = 600 kHz 85% 90% ISW Switching-node leakage current (sourcing) Outputs OFF 2 12 μA THERMAL SHUTDOWN TSD (3) Shutdown temperature 148 °C TSD(hys) (3) Hysteresis 20 °C (3) Ensured by design. Not production tested. (4) See Figure 14 for ISWx peak current <1 A. 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPS54386-Q1 |
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