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TPS54316MPWPREP Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS54316MPWPREP Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 21 page www.ti.com TPS54311-EP, TPS54312-EP, TPS54313-EP, TPS54314-EP, TPS54315-EP, TPS54316-EP SGLS376A – FEBRUARY 2007 – REVISED MARCH 2007 Electrical Characteristics (continued) T J = –55°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Ramp amplitude (peak-to-peak)(1) 1 V Minimum controllable on time(1) 200 ns Maximum duty cycle(1) 90% ERROR AMPLIFIER Error amplifier open loop voltage 26 dB gain(1) Error amplifier unity gain bandwidth(1) 3 5 MHz PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH 10-mV overdrive(1) 70 85 ns pin (excluding dead time) SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V Enable hysteresis voltage, SS/ENA(5) 0.03 V Falling edge deglitch, SS/ENA(5) 2.5 µs Internal slow-start time(5) 3.5 4.5 5.4 ms Charge current, SS/ENA SS/ENA = 0 V 2.5 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 2.7 V 1.2 2.3 4 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage(5) 3 %Vref Power good falling edge deglitch(5) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 6.0 V 1 µA CURRENT LIMIT Current limit trip point VI = 3 V, output shorted 4 6.5 A Current limit leading edge blanking 100 ns time(5) Current limit total response time(5) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(5) 135 150 165 °C Thermal shutdown hysteresis(5) 10 °C OUTPUT POWER MOSFETS VI = 6 V(6) 59 88 rDS(o Power MOSFET switches m Ω n) VI = 3 V(6) 85 136 (5) Specified by design (6) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design. 6 Submit Documentation Feedback |
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