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CSD17303Q5 Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce CSD17303Q5
Description  Using the TPS51916EVM-746 Complete DDR2, DDR3
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17303Q5 Fiches technique(HTML) 3 Page - Texas Instruments

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Description
1
Description
The TPS51916EVM-746 is designed to use a regulated 12-V bus to produce a regulated 1.5-VDDQ output
at up to a 20-A load current. The TPS51916EVM-746 demonstrates TPS51916 in a typical DDR3
application with D-CAP2
™-mode operation. The EVM also provides test points to evaluate the
performance of the TPS51916.
1.1
Typical Applications
DDR2/DDR2/DDR3L/DDR4 memory power supplies
SSTL_18, SSTL_15, SSTL_135, and HSTL termination
1.2
Features
The TPS51916EVM-746 features:
D-CAP2
™-mode operation with all-ceramic VDDQ output capacitor
20-Adc steady-state VDDQ output current
Support VDDQ prebias start-up
SW1 and SW2 provides S3, S5 power control
Optional external VLDOIN voltage for efficiency and flexible operation
Convenient test points for probing critical waveforms
2
Electrical Performance Specifications
Table 1. TPS51916EVM-746 Electrical Performance Specifications
Parameter
Test Conditions
Min
Typ
Max
Units
Input Characteristics
Voltage range
VIN
8
12
20
V
V5IN
4.5
5
5.5
Maximum input current
VIN = 8 V, IVDDQ = 20 A
4.21
A
No-load input current
Vin = 20 V, IVDDQ = 0 A
0.1
mA
VDDQ Output
DDR3 (Default setting), R15 = 47.5k, R16 = 2k
1.5
V
DDR2, R15 = R16= Open
1.8
V
VDDQ Output voltage
(VDDQSNS)
DDR3L, R15 = 28k, R16 = 2k
1.35
V
DDR4, R15 = 18.2k, R16 = 2k
1.2
V
VDDQ Output voltage regulation
Line regulation (Vin = 8 V
–20 V)
0.2%
Load regulation (Vin = 12 V, IVDDQ = 0 A–20 A)
0.5%
Output voltage ripple
Vin = 12 V, IVDDQ = 20 A
20
mVpp
Output load current
0
20
A
Output overcurrent
30
A
Switching frequency
500
kHz
Peak efficiency
Vin = 12 V, 1.5 VDDQ/8 A
90.93%
Full-load efficiency
Vin = 12 V, 1.5 VDDQ/20 A
87.3%
VTT Output
VTT output voltage
VTTREF
V
For DDR2(0.9 VTT) and DDR3(0.75 VTT)
–2
2
A
VTT output current
For DDR3L(0.675 VTT) and DDR4(0.6 VTT)
–1.5
1.5
A
|IVTT| < 2 A, 1.4 V ≤ VVDDQSNS ≤ 1.8 V
–40
40
mV
VTT output tolerance to VTTREF
|IVTT| < 1.5 A, 1.2 V ≤ VVDDQSNS < 1.4 V
–40
40
mV
VTTREF Output
VTTREF output voltage
VDDQSNS/2
V
VTTREF output current
–10
10
mA
3
SLUU526
– August 2011
Using the TPS51916EVM-746 Complete DDR2, DDR3, DDR3L, and DDR4
Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered
Submit Documentation Feedback
Reference
Copyright
© 2011, Texas Instruments Incorporated


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