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TPS54353MPWPREP Fiches technique(PDF) 5 Page - Texas Instruments |
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TPS54353MPWPREP Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 35 page TPS54352-EP ,, TPS54353-EP,, TPS54354-EP TPS54355-EP , TPS54356-EP, TPS54357-EP www.ti.com ....................................................................................................................................................... SLVS684A – JANUARY 2007 – REVISED JULY 2009 Electrical Characteristics (continued) TJ = –55°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Falling-Edge-Triggered Bidirectional Sync System (SYNC) SYNC out low-to-high rise time 25 pF to ground 200 500 ns (10%/90%)(1) SYNC out high-to-low fall time 25 pF to ground 5 10 ns (90%/10%)(1) Delay from rising edge to rising edge of PH Falling-edge delay time(1) 180 ° pins, See Figure 19 Minimum input pulse width(1) RT = 100 k Ω 100 ns Delay RT = 100 k Ω 360 ns (falling-edge SYNC to rising-edge PH)(1) SYNC out high-level voltage 50-k Ω resistor to ground, No pullup resistor 2.5 V SYNC out low-level voltage 0.6 V SYNC in low-level threshold 0.8 V SYNC in high-level threshold 2.3 V Percentage of programmed frequency –10% 10% SYNC in frequency range(1) 225 770 kHz Feed-Forward Modulator (Internal Signal) Modulator gain VIN = 12 V, TJ = 25°C 8 Modulator gain variation ±25% Minimum controllable ON time(1) 180 ns Maximum duty factor(1) VIN = 4.5 V 80% 86% VSENSE Input bias current, VSENSE 1 µA Enable (ENA) Disable low-level input voltage 0.5 V fs = 250 kHz, RT = ground (1) 3.2 TPS54352 fs = 500 kHz, RT = Hi-Z (1) 1.6 fs = 250 kHz, RT = ground (1) 4 TPS54353 fs = 500 kHz, RT = Hi-Z (1) 2 fs = 250 kHz, RT = ground (1) 4.6 TPS54354 Internal fs = 500 kHz, RT = Hi-Z (1) 2.3 slow-start time ms fs = 250 kHz, RT = ground (1) 4.4 (10% to 90%) TPS54355 fs = 500 kHz, RT = Hi-Z (1) 2.2 fs = 250 kHz, RT = ground (1) 5.9 TPS54356 fs = 500 kHz, RT = Hi-Z (1) 2.9 fs = 250 kHz, RT = ground (1) 5.4 TPS54357 fs = 500 kHz, RT = Hi-Z (1) 2.7 Pullup current source 1.8 5 10 µA Pulldown MOSFET II(ENA) = 1 mA 0.1 V Power Good (PWRGD) Power-good threshold Rising voltage 97% fs = 250 kHz 4 Rising-edge delay(1) ms fs = 500 kHz 2 Output saturation voltage Isink = 1 mA, VIN > 4.5 V 0.05 V PWRGD Output saturation voltage Isink = 100 µA, VIN = 0 V 0.76 V Open-drain leakage current Voltage on PWRGD = 6 V 3 µA (1) Specified by design, not production tested Copyright © 2007–2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): TPS54352-EP TPS54353-EP TPS54354-EP TPS54355-EP TPS54356-EP TPS54357-EP |
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