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TPS2551QDBVRQ1 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPS2551QDBVRQ1 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 26 page RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS TPS2551-Q1 www.ti.com ...................................................................................................................................................................................................... SLVS850 – JUNE 2008 MIN MAX UNIT VIN Input voltage, IN 2.5 6.5 V VEN Enable voltage 0 6.5 V IOUT Continuous output current, OUT 0 1.1 A RILIM Current-limit set resistor from ILIM to GND 14.3 80.6 k Ω IFAULT FAULT sink current 0 10 mA TJ Operating junction temperature –40 125 °C over recommended operating junction temperature range, 2.5 V ≤ VIN ≤ 6.5 V, RILIM = 14.3 kΩ, VEN = 5.0 V (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT POWER SWITCH TJ = 25 °C 85 95 Static drain-source on-state rDS(on) m Ω resistance –40 °C ≤ TJ ≤ 125 °C 135 VIN = 6.5 V 1.0 1.5 CL = 1 µF, RL = 100 Ω, tr Rise time, output (see Figure 2) VIN = 2.5 V 0.65 1.0 ms VIN = 6.5 V 0.2 0.5 CL = 1 µF, RL = 100 Ω, tf Fall time, output (see Figure 2) VIN = 2.5 V 0.2 0.5 ENABLE INPUT EN OR EN VIH High-level input voltage 1.1 V VIL Low-level input voltage 0.66 IEN Input current VEN = 0 V or 6.5 V –0.5 0.5 µA ton Turnon time 3.6 ms CL = 1 µF, RL = 100 Ω, (see Figure 2) toff Turnoff time 3 ms CURRENT LIMIT RILIM = 80.6 kΩ 110 215 300 Short-circuit current, OUT IOS RILIM = 38.3 kΩ 300 500 650 connected to GND RILIM = 15 kΩ 1050 1400 1650 mA RILIM = 80.6 kΩ 290 315 420 Current-limit threshold (maximum IOC dc output current IOUT delivered to RILIM = 38.3 kΩ 620 665 750 load) RILIM = 15 kΩ 1550 1650 1750 tIOS Response time to short circuit VIN = 5.0 V (see Figure 3) 2 µs REVERSE-VOLTAGE PROTECTION Reverse-voltage comparator trip point 95 135 190 mV (VOUT – VIN) Time from reverse-voltage VIN = 5.0 V 3 5 7 ms condition to MOSFET turn off SUPPLY CURRENT VIN = 6.5 V, No load on OUT, VEN = 0 V, 14.3 kΩ ≤ IIN_off Supply current, low-level output 0.1 1 µA RILIM ≤ 80.6 kΩ RILIM = 15 kΩ 150 µA VIN = 6.5 V, No load on IIN_on Supply current, high-level output OUT, VEN = 6.5 V RILIM = 80.6 kΩ 130 µA IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V, TJ = 25 °C 0.01 1 µA (1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS2551-Q1 |
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