CDCLVD1216RGZR datasheet(4/20 Pages) TI1

No de pièce	CDCLVD1216RGZR

Description	2:16 Low Additive Jitter LVDS Buffer

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Fabricant	TI1 [Texas Instruments]

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CDCLVD1216

SCAS900B – OCTOBER 2010 – REVISED JANUARY 2011

www.ti.com

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

(1)

VALUE

UNIT

Supply voltage range, VCC

–0.3 to 2.8

V

Input voltage range, VI

–0.2 to (VCC + 0.2)

V

Output voltage range, VO

–0.2 to (VCC + 0.2)

V

Driver short circuit current, IOSD

See Note (2)

Electrostatic discharge (Human Body Model, 1.5 k

Ω, 100 pF)

>3000

V

(1)

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2)

The outputs can handle permanent short.

RECOMMENDED OPERATING CONDITIONS

MIN

TYP

MAX

UNIT

Device supply voltage, VCC

2.375

2.5

2.625

V

Ambient temperature, TA

–40

85

°C

THERMAL INFORMATION

CDCLVD1216

THERMAL METRIC(1)

UNITS

RGZ(48 PINS)

qJA

Junction-to-ambient thermal resistance

30.6

qJC(top)

Junction-to-case(top) thermal resistance

28.5

qJB

Junction-to-board thermal resistance

10.5

°C/W

yJT

Junction-to-top characterization parameter

0.4

yJB

Junction-to-board characterization parameter

10.2

qJC(bottom)

Junction-to-case(bottom) thermal resistance

3.1

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

ELECTRICAL CHARACTERISTICS

At VCC = 2.375V to 2.625V, TA = –40°C to 85°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IN_SEL CONTROL INPUT CHARACTERISTICS

VdI3

3 State

Open

0.5×VCC

V

VdIH

Input high voltage

0.7×VCC

V

VdIL

Input low voltage

0.2×VCC

V

IdIH

Input high current

VCC = 2.625 V, VIH = 2.625 V

30

mA

IdIL

Input low current

VCC = 2.625 V, VIL= 0V

–30

mA

Rpull(IN_SEL)

Input pull-up/ pull-down resistor

200

k

Ω

2.5V LVCMOS (see Figure 7) INPUT CHARACTERISTICS

fIN

Input frequency

200

MHz

External threshold voltage applied to

Vth

Input threshold voltage

1.1

1.5

V

complementary input

VIH

Input high voltage

Vth + 0.1

VCC

V

VIL

Input low voltage

0

Vth – 0.1

V

IIH

Input high current

VCC = 2.625 V, VIH = 2.625 V

10

mA

IIL

Input low current

VCC = 2.625 V, VIL = 0 V

–10

mA

ΔV/ΔT

Input edge rate

20%–80%

1.5

V/ns

CIN

Input capacitance

2.5

pF

4

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