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CD4010BQDRQ1 Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce CD4010BQDRQ1
Description  CMOS HEX BUFFER/CONVERTER
Download  14 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CD4010BQDRQ1 Fiches technique(HTML) 3 Page - Texas Instruments

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CD4010B-Q1
www.ti.com
SCHS379A
– MARCH 2010 – REVISED JANUARY 2012
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
VDD
DC supply voltage range, voltages referenced to VSS terminal
–0.5 to +20
V
Input voltage range, all inputs
–0.5 to VDD +0.5
V
DC input current, any one input
±10
mA
TA = –40°C to +100°C
500
PD
Power dissipation per package
mW
Derate linearly at
TA = +100°C to +125°C
12 mW/
°C to 200 mW
Device dissipation per output
TA = full package-temperature range
100
mW
transistor
(all packages types)
TA
Operating temperature range
–40 to +125
°C
Tstg
Storage temperature range
–65 to +150
°C
Latch-up performance per JESD 78, Class I
100
mA
Human-body model (HBM)
500
ESD
Electrostatic discharge rating(2)
Machine model (MM)
100
V
Charged-Device Model (CDM)
1000
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Tested in accordance with AEC-Q100.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VDD
3
18
Supply voltage range(1)
V
VCC
3
VDD
VI
Input voltage range
VCC
VDD
V
(1)
The CD4010B has high-to-low level voltage conversion capability, but not low-to-high level; therefore, it is recommended that
VDD > VI > VCC.
Copyright
© 2010–2012, Texas Instruments Incorporated
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