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ADF4360-3BCPZRL Fiches technique(PDF) 6 Page - Analog Devices |
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ADF4360-3BCPZRL Fiches technique(HTML) 6 Page - Analog Devices |
6 / 24 page ADF4360-3 Data Sheet Rev. C | Page 6 of 24 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter Rating AVDD to GND1 −0.3 V to +3.9 V AVDD to DVDD −0.3 V to +0.3 V VVCO to GND −0.3 V to +3.9 V VVCO to AVDD −0.3 V to +0.3 V Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V Analog I/O Voltage to GND −0.3 V to VDD + 0.3 V REFIN to GND −0.3 V to VDD + 0.3 V Operating Temperature Range Maximum Junction Temperature 150°C CSP θJA Thermal Impedance (Paddle Soldered) 50°C/W (Paddle Not Soldered) 88°C/W Lead Temperature, Soldering Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C 1 GND = AGND = DGND = 0 V. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with an ESD rating of <1 kV and it is ESD sensitive. Proper precautions should be taken for handling and assembly. TRANSISTOR COUNT 12543 (CMOS) and 700 (Bipolar). ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
Numéro de pièce similaire - ADF4360-3BCPZRL |
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Description similaire - ADF4360-3BCPZRL |
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