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FDDS100H06_F085 Fiches technique(PDF) 6 Page - Fairchild Semiconductor |
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FDDS100H06_F085 Fiches technique(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page P-CHANNel PowerTrench® MOSFeTs Save Space and Manage Thermal Issues in Mobile Designs Designers of mobile devices are challenged to save space, increase efficiency and manage thermal issues in their end applications. Now minimizing both board space and R DS(ON) in a miniature form factor is possible with the FDZ661PZ and FDZ663P P-channel, 1.5V specified PowerTrench® thin WLCSP MOS- FETs. These advanced WLCSP MOSFETs use a state-of-the-art “fine pitch,” thin WLCSP packaging process which enables the devices to combine excel- lent thermal transfer characteristics, ultra-low profile (<0.4mm) and small (0.8mm x 0.8mm) packaging, low gate charge, and low R DS(ON). Advantages • Occupiesonly0.64mm2of PCBarea • Ultra-thinpackage:lessthan 0.4mmheightwhenmounted toPCB • Excellentthermal characteristics • HBMESDprotectionlevel 2kV(FDZ661PZ) Applications • Batterymanagement • Loadswitch • Batteryprotection For more information, please visit: fairchildsemi.com/pf/FD/FDZ661PZ.html fairchildsemi.com/pf/FD/FDZ663P.html State-of-the-Art Fine Pitch,Thin WLCSP for Mobile Devices Product Number BV DSS (V) V GS (V) V GS(th) (V) Typ R DS(ON) (mΩ) Max Q g Typ (nC) @ V GS = 4.5V i D (A) P D (W) Package FDZ661PZ -20 ±8 -1.5V GS - 4.5V GS 6.3 8.8 -2.6 0.4 WlCSP (0.8mm x 0.8mm) 315mΩ 140mΩ FDZ663P -20 ±8 -1.5V GS - 4.5V GS 5.9 8.2 -2.7 0.4 WlCSP (0.8mm x 0.8mm) 288mΩ 134mΩ |
Numéro de pièce similaire - FDDS100H06_F085 |
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Description similaire - FDDS100H06_F085 |
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