TP60P datasheet(2/4 Pages) SIEMENS

No de pièce	TP60P

Description	Silizium-Fotoelement Silicon Photovoltaic Cell

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Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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2 / 4 page

TP 60 P

Semiconductor Group

201

Grenzwerte

Maximum Ratings

Bezeichnung

Description

Symbol

Wert

Value

Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range

T

op; Tstg

– 40 ... + 80

°C

Sperrspannung

Reverse voltage

V

R

1V

Kennwerte (T

A = 25 °C, Normlicht A, T

= 2856 K)

Characteristics (T

A = 25 °C, standard light A, T

= 2856 K)

Bezeichnung

Description

Symbol

Wert

Value

Einheit

Unit

Fotoempfindlichkeit,

V

R = 0 V

Spectral sensitivity

S

1 (

≥ 0.7)

µA/Ix

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity

λ

S max

900

nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10 % von S

max

Spectral range of sensitivity

S = 10 % of S

max

λ

400 ... 1120

nm

Bestrahlungsempfindliche Fläche

Radiant sensitive area

A

1.3

cm2

Form der bestrahlungsempfindlichen Fläche

Shape of radiant sensitive area

Sechseck

hexagon

Halbwinkel

Half angle

ϕ± 60

Grad

deg.

Dunkelstrom,

V

R = 1 V; E = 0

Dark current

I

R

0.1 (

≤ 2)

µA

Spektrale Fotoempfindlichkeit,

λ = 850 nm

Spectral sensitivity

Sλ

0.55

A/W

Quantenausbeute,

λ = 850 nm

Quantum yield

η

0.80

Electrons

Photon

Leerlaufspannung,

Open-circuit voltage

E

v = 1000 Ix

E

e = 0.5 mW/cm

2;

λ = 850 nm

V

O

V

O

450 (

≥ 270)

430

mV

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