Moteur de recherche de fiches techniques de composants électroniques |
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4T08AF-CW Fiches technique(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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4T08AF-CW Fiches technique(HTML) 5 Page - Nell Semiconductor Co., Ltd |
5 / 7 page www.nellsemi.com Page 5 of 7 SEMICONDUCTOR 4T Series RoHS RoHS 1 10 100 ITM (A) 0 5 10 15 20 25 30 35 40 ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number of cycles. 0 1 10 2 9 3 8 7 6 5 1 10 100 1000 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT IH & IL Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig.10 Relative variation of critical rate of of main current versus junction temperature decrease Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. 2 and corresponding value of l t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2 lTSM (A), l t(A s) l ,l ,l [T ] / l ,l ,l [T =25°C] GT H L j GT H L j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 4 VTM(V) T =25°C j T =125°C j T max. : j Vto = 0.85 V Rd = 100 mW Number of cycles t=20ms Non repetitive T initial=25°C j Repetitive T =100°C c One cycle 10 100 1000 dI/dt limitation: 50A/µs T initial=25°C j ITSM 2 I t tp(ms) T (°C) j 0.01 1 0.10 1.00 10.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dV/dt)c (V/µs) D S T A T (°C) j 0 1 2 3 4 5 6 0 25 50 75 100 125 Fig.11 DPAK thermal resistance junction to ambient versus copper surface under tab (priented circuit board Fr4, copper thickness:35 µm) 0 10 20 30 40 50 60 70 80 90 100 0 4 8 12 16 20 24 28 32 36 40 Rth(j-a)°(C/W) (dl/dt)c [T ] / (dl/dt)c [T specified] j j 2 S(cm ) |
Numéro de pièce similaire - 4T08AF-CW |
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Description similaire - 4T08AF-CW |
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