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Z0109NA Fiches technique(PDF) 7 Page - NXP Semiconductors |
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Z0109NA Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 14 page Z0109NA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 21 March 2011 7 of 14 NXP Semiconductors Z0109NA 4Q Triac 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C; see Figure 7 --10 mA VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C; see Figure 7 --10 mA VD =12V; IT = 0.1 A; T2- G-; Tj =25°C; see Figure 7 --10 mA VD =12V; IT = 0.1 A; T2- G+; Tj =25°C; see Figure 7 --10 mA IL latching current VD =12V; IG = 0.1 A; T2+ G+; Tj =25°C; see Figure 8 --15 mA VD =12V; IG = 0.1 A; T2+ G-; Tj =25°C; see Figure 8 --25 mA VD =12V; IG = 0.1 A; T2- G-; Tj =25°C; see Figure 8 --15 mA VD =12V; IG = 0.1 A; T2- G+; Tj =25°C; see Figure 8 --15 mA IH holding current VD =12V; Tj =25 °C; see Figure 9 --10 mA VT on-state voltage IT =1A; Tj = 25 °C; see Figure 10 -1.3 1.6 V VGT gate trigger voltage VD =12V; IT = 0.1 A; Tj =25°C; see Figure 11 --1.3 V VD =800 V; IT = 0.1 A; Tj =125 °C; see Figure 11 0.2 --V ID off-state current VD =800 V; Tj = 125 °C - - 0.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM =536 V; Tj = 110 °C; exponential waveform; gate open circuit; see Figure 12 50 --V/µs dVcom/dt rate of change of commutating voltage VD =400 V; Tj =110 °C; dIcom/dt = 0.44 A/ms; IT =1A; gate open circuit 2 --V/µs |
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