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US112NL-4-TA3-T Fiches technique(PDF) 2 Page - Unisonic Technologies |
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US112NL-4-TA3-T Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 3 page US112S/N SCR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R301-013.Ca ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATING UNIT Repetitive Peak Off-State Voltages US112S/N-4 VDRM VRRM 400 V US112S/N-6 600 US112S/N-8 800 RMS On-State Current (180°Conduction Angle) (TC = 110℃) IT(RMS) 12 A Average On-State Current (180°Conduction Angle) (TC = 110℃) IT(AV) 8 A Non Repetitive Surge Peak On-State Current (TJ = 25℃) tP=8.3ms ITSM 146 A tP=10ms 140 I²t Value For Fusing (tP = 10 ms ,TJ = 25℃) I²t 98 A²S Critical Rate Of Rise Of On-State Current (IG = 2 x IGT , tR ≤ 100 ns, TJ = 125℃) dI/dt 50 A/µs Peak Gate Current (tP=20μs, F = 60 Hz, TJ =125℃) IGM 4 A Peak Reverse Gate Voltage US112N VRGM 5 V Average Gate Power Dissipation (TJ= 125℃) PG(AV) 1 W Storage Temperature TSTG -40 ~ +150 ℃ Junction Temperature TJ +125 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 K/W Junction to Case θJC 1.3 K/W ELECTRICAL CHARACTERISTICS (TJ=25℃unless otherwise specified) US112S(SENSITIVE) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT VD = 12V, RL =140Ω 200 µA Gate Trigger Voltage VGT VD = 12V, RL=140Ω 0.8 V Gate Non-Trigger Voltage VGD VD = VDRM, RL = 3.3kΩ, RGK = 1KΩ, TJ = 125℃ 0.1 V Reverse Gate Voltage VRG IRG = 10 µA 8 V Holding Current IH IT = 50mA, RGK = 1kΩ 5 mA Latching Current IL IG = 1mA , RGK = 1kΩ 6 mA Circuit Rate of Change of Off-State Voltage dV/dt VD = 67% VDRM, RGK = 220Ω 5 V/µs On-State Voltage VTM ITM =24A, tP = 380 µs 1.6 V Threshold Voltage VT0 TJ = 125℃ 0.85 V Dynamic Resistance RD TJ = 125℃ 30 mΩ Off-State Leakage Current IDRM IRRM VDRM = VRRM, RGK=220Ω 5 µA VDRM = VRRM, RGK=220Ω, TJ= 125℃ 2 mA |
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