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1N50L-TA3-T Fiches technique(PDF) 3 Page - Unisonic Technologies |
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1N50L-TA3-T Fiches technique(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 1N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-548.b ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.65A 4.6 6.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS 220 290 pF Output Capacitance COSS 30 35 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 11 13 pF SWITCHING PARAMETERS Total Gate Charge QG 11 16 nC Gate to Source Charge QGS 1.6 nC Gate to Drain Charge QGD VGS=10V, VDS=400V, ID=1.5A (Note 1, 2) 5.5 nC Turn-ON Delay Time tD(ON) 12 35 ns Rise Time tR 13 35 ns Turn-OFF Delay Time tD(OFF) 42 90 ns Fall-Time tF VDD=250V, ID=1.5A, RG=25Ω (Note 1, 2) 15 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 1.3 A Maximum Body-Diode Pulsed Current ISM 5 A Drain-Source Diode Forward Voltage VSD IS=1.3A, VGS=0V 1.15 V Body Diode Reverse Recovery Time trr 162 ns Body Diode Reverse Recovery Charge QRR IS=1.5A, VGS=0V, dIF/dt=100A/µs (Note 1) 0.54 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Numéro de pièce similaire - 1N50L-TA3-T |
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Description similaire - 1N50L-TA3-T |
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