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AM10N30-600I Datasheet(Fiches technique) 1 Page - Analog Power

Numéro de pièce AM10N30-600I
Description  N-Channel 300-V (D-S) MOSFET
Télécharger  3 Pages
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Fabricant  ANALOGPOWER [Analog Power]
Site Internet  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM10N30-600I Datasheet(HTML) 1 Page - Analog Power

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AM10N30-600I
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM10N30-600_A
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) (m )
ID (A)
600 @ VGS = 10V
7.5
900 @ VGS = 5.5V
6.1
PRODUCT SUMMARY
300
N-Channel 300-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
300
VGS
±20
Continuous Drain Current
a
TC=25
o
C ID
7.5
IDM
36
IS
5
A
Power Dissipation
a
TC=25
o
C PD
50
W
TJ, Tstg
-55 to 175
o
C
Operating Junction and Storage Temperature Range
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Paramete r
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
A
Parameter
Symbol
Maximum
Units
Maximum Junction-to-Ambient
a
RθJA
50
oC/W
Maximum Junction-to-Case
RθJC
3.0
oC/W
THERMAL RESISTANCE RATINGS


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