NX6510GH datasheet(1/7 Pages) RENESAS

No de pièce	NX6510GH

Description	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

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R08DS0051EJ0100 Rev.1.00

Page 1 of 5

Jan 19, 2012

Preliminary Data Sheet

NX6510GH

LASER DIODE

1 550 nm InGaAsP MQW-DFB LASER DIODE

FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

DESCRIPTION

The NX6510GH is a 1 550 nm Multiple Quantum Well (MQW) structured

Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

APPLICATIONS

• 1.25 Gb/s FTTH P2P

• OC-48 IR-2

FEATURES

• Optical output power

PO = 5.0 mW

• Low threshold current

Ith = 10 mA

• Differential efficiency

ηd = 0.35 W/A

• Wide operating temperature range

TC =

−40 to +85°C

• InGaAs monitor PIN-PD

• CAN package

φ 5.6 mm

• Focal point

7.5 mm

R08DS0051EJ0100

Rev.1.00

Jan 19, 2012

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