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BYP300 Fiches technique(PDF) 1 Page - Siemens Semiconductor Group |
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BYP300 Fiches technique(HTML) 1 Page - Siemens Semiconductor Group |
1 / 2 page Semiconductor Group 1 09.96 BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218 AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 4 A RMS forward current IFRMS 6.5 Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz IFSM 15 Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs IFRM 40 i 2t value Tj = 100 °C, tp = 10 ms ∫i2dt 1.1 A2s Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 Power dissipation TC = 90 °C Ptot 15 W Chip or operating temperature Tj -40 ... + 150 °C Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case RthJC ≤ 3.8 K/W Thermal resistance, chip-ambient RthJA ≤ 46 DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56 |
Numéro de pièce similaire - BYP300 |
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Description similaire - BYP300 |
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