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2SK1151_11 Datasheet(Fiches technique) 2 Page - Renesas Technology Corp

Numéro de pièce 2SK1151_11
Description  Silicon N Channel MOS FET
Télécharger  7 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
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2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
R07DS0397EJ0300 Rev.3.00
Page 2 of 6
May 16, 2011
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1151
450
Drain to source breakdown
voltage
2SK1152
V(BR)DSS
500
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
V
IG = ±100 μA, VDS = 0
Gate to source leak current
IGSS
±10
μA
VGS = ±25 V, VDS = 0
2SK1151
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1152
IDSS
100
μA
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
2SK1151
3.5
5.5
Static drain to source on
state resistance
2SK1152
RDS(on)
4.0
6.0
Ω
ID = 1 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
0.6
1.1
S
ID = 1 A, VDS = 20 V *
3
Input capacitance
Ciss
160
pF
Output capacitance
Coss
45
pF
Reverse transfer capacitance
Crss
5
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
5
ns
Rise time
tr
10
ns
Turn-off delay time
td(off)
20
ns
Fall time
tf
10
ns
ID = 1 A, VGS = 10 V,
RL = 30 Ω
Body to drain diode forward voltage
VDF
1.0
V
IF = 1.5 A, VGS = 0
Body to drain diode reverse recovery
time
trr
220
ns
IF = 1.5 A, VGS = 0,
diF/dt = 100 A/μs
Note:
3. Pulse test




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