BUZ356 datasheet(8/9 Pages) SIEMENS

No de pièce	BUZ356

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 356

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 6 A, VDD = 50 V

R

GS = 25 Ω, L = 37.5 mH

20

40

60

80

100

120

°C

160

T

j

0

50

100

150

200

250

300

350

400

450

500

550

600

650

mJ

750

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

I

D puls = 9 A

0

20

40

60

80

100 120 140 160 nC 190

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

160

T

j

720

740

760

780

800

820

840

860

880

900

920

V

960

V

(BR)DSS

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