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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BUZ349 Fiches technique(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ349 Fiches technique(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 9 page  Semiconductor Group 3 07/96 BUZ 349 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 21 A gfs 10 17 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 1400 1850 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 450 700 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 230 370 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 20 30 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 80 120 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 230 300 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 120 160 |
Numéro de pièce similaire - BUZ349 |
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Description similaire - BUZ349 |
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