BUZ271 datasheet(6/9 Pages) SIEMENS

No de pièce	BUZ271

Description	SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

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6 / 9 page

Semiconductor Group

6

07/96

BUZ 271

Typ. output characteristics

ID = ƒ(VDS)

parameter:

t

p = 80 µs

0

-2

-4

-6

-8

V

-12

V

DS

0

-5

-10

-15

-20

-25

-30

-35

-40

A

-50

I

D

V

GS

[V]

a

-4.0

b

-4.5

c

-5.0

d

-5.5

e

-6.0

f

-6.5

g

-7.0

h

-7.5

i

-8.0

j

-9.0

k

-10.0

l

Ptot = 125W

l

-20.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter:

V

GS

0

-4

-8

-12

-16

A

-24

I

D

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

Ω

0.45

R

DS (on)

VGS [V] =

a

-4.0

VGS [V] =

a

-4.5

VGS [V] =

a

-5.0

b

-5.5

c

-6.0

d

-6.5

e

-7.0

f

-7.5

g

-8.0

h

-9.0

i

-10.0

j

-20.0

Typ. transfer characteristics

ID = f (VGS)

parameter:

tp = 80 µs

VDS≥2 x ID x RDS(on)max

0

-1

-2

-3

-4

-5

-6

-7

-8

V

-10

V

GS

0

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

A

-24

I

D

Typ. forward transconductance

gfs = f (ID)

parameter:

tp = 80 µs,

VDS≥2 x ID x RDS(on)max

0

-4

-8

-12

-16

A

-22

I

D

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

S

6.0

g

fs

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