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BUZ10S2 Datasheet(Fiches technique) 1 Page - Siemens Semiconductor Group

Numéro de pièce BUZ10S2
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Télécharger  9 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ10S2 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
07/96
BUZ 10 S2
Not for new design
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 10 S2
60 V
23 A
0.07
TO-220 AB
C67078-S1300-A7
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 26 °C
ID
23
A
Pulsed drain current
TC = 25 °C
IDpuls
92
Avalanche current,limited by
Tjmax
IAR
23
Avalanche energy,periodic limited by
Tjmax
EAR
1.3
mJ
Avalanche energy, single pulse
ID = 23 A, VDD = 25 V, RGS = 25 Ω
L = 15.1 µH, Tj = 25 °C
EAS
8
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot
75
W
Operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 1.67
K/W
Thermal resistance, chip to ambient
RthJA
≤ 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56


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