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BUZ10S2 Datasheet(Fiches technique) 6 Page - Siemens Semiconductor Group

Numéro de pièce BUZ10S2
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Télécharger  9 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ10S2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

  BUZ10S2 Datenblatt HTML 1Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 2Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 3Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 4Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 5Page - Siemens Semiconductor Group BUZ10S2 Datasheet HTML 6Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 7Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 8Page - Siemens Semiconductor Group BUZ10S2 Datenblatt HTML 9Page - Siemens Semiconductor Group  
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Semiconductor Group
6
07/96
BUZ 10 S2
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter:
tp = 80 µs
0.0
1.0
2.0
3.0
4.0
5.0
V
6.5
V
DS
0
5
10
15
20
25
30
35
40
45
A
55
I
D
V
GS
[V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
Ptot = 75W
l
20.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter:
VGS
0
5
10
15
20
25
30
35
40
A
50
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.22
R
DS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
A
55
I
D
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0
5
10
15
20
25
30
35
40
A
50
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs


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