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BUZ104SL-4 Datasheet(Fiches technique) 2 Page - Siemens Semiconductor Group

Numéro de pièce BUZ104SL-4
Description  SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Télécharger  8 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ104SL-4 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  BUZ104SL-4 Datenblatt HTML 1Page - Siemens Semiconductor Group BUZ104SL-4 Datasheet HTML 2Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 3Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 4Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 5Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 6Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 7Page - Siemens Semiconductor Group BUZ104SL-4 Datenblatt HTML 8Page - Siemens Semiconductor Group  
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Semiconductor Group
2
07/Oct/1997
BUZ 104SL-4
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - soldering point 1)
RthJS
-
-
tbd
K/W
Thermal resistance, junction - ambient 2)
RthJA
-
-
62.5
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS
55
-
-
V
Gate threshold voltage
VGS=VDS, ID = 20 µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS = 55 V, VGS = 0 V, Tj = -40 °C
VDS = 55 V, VGS = 0 V, Tj = 25 °C
VDS = 55 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
100
1
0.1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-resistance
VGS = 5 V, ID = 3.2 A
RDS(on)
-
0.095
0.125


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Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
BUZ103SL-4SIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ100SL-4SIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ101SL-4SIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ102SL-4SIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ102SLSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ111SLSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ70LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ103ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ11ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level 1 2 3 4 5 MoreSiemens Semiconductor Group
BUZ31LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level 1 2 3 4 5 MoreSiemens Semiconductor Group

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