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BUZ103SL Datasheet(Fiches technique) 6 Page - Siemens Semiconductor Group

Numéro de pièce BUZ103SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
Télécharger  8 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ103SL Datasheet(HTML) 6 Page - Siemens Semiconductor Group

  BUZ103SL Datenblatt HTML 1Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 2Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 3Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 4Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 5Page - Siemens Semiconductor Group BUZ103SL Datasheet HTML 6Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 7Page - Siemens Semiconductor Group BUZ103SL Datenblatt HTML 8Page - Siemens Semiconductor Group  
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Semiconductor Group
6
30/Jan/1998
BUZ 103 SL
SPP28N05L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
A
65
I
D
V
GS
[V]
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
Ptot = 75W
l
10.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0
10
20
30
40
A
55
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.16
R
DS (on)
VGS [V] =
a
2.5
VGS [V] =
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
6.5
i
i
7.0
j
j
8.0
k
k
10.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D


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