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BUZ103S Datasheet(Fiches technique) 4 Page - Siemens Semiconductor Group

Numéro de pièce BUZ103S
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
Télécharger  8 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ103S Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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Semiconductor Group
4
30/Jan/1998
BUZ 103 S
SPP31N05
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS
-
-
31
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
-
-
124
Inverse diode forward voltage
VGS = 0 V, IF = 62 A
VSD
-
1.2
1.8
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
trr
-
55
85
ns
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr
-
0.1
0.15
µC


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