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BUZ103 Datasheet(Fiches technique) 6 Page - Siemens Semiconductor Group

Numéro de pièce BUZ103
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Télécharger  9 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ103 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
07/96
BUZ 103
Typ. output characteristics
ID = ƒ(VDS)
parameter:
t
p = 80 µs
0.0
1.0
2.0
3.0
4.0
V
6.0
V
DS
0
10
20
30
40
50
60
70
A
90
I
D
V
GS
[V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k 10.0
l
Ptot = 120W
l
20.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter:
V
GS
0
10
20
30
40
50
60
A
75
I
D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.13
R
DS (on)
VGS [V] =
a
4.0
VGS [V] =
a
4.5
VGS [V] =
a
a
5.0
b
b
5.5
c
c
6.0
d
d
6.5
e
e
7.0
f
f
7.5
g
g
8.0
h
h
9.0
i
i
10.0
j
j
20.0
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0
10
20
30
40
A
60
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs


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