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BUZ102SL Datasheet(Fiches technique) 3 Page - Siemens Semiconductor Group

Numéro de pièce BUZ102SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
Télécharger  8 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ102SL Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
30/Jan/1998
BUZ 102 SL
SPP47N05L
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 33 A
gfs
10
-
-
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
-
1380
1730
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
-
410
515
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
-
230
290
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
td(on)
-
15
25
ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
tr
-
30
45
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
td(off)
-
30
45
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
tf
-
20
30
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Qg(th)
-
2
3
nC
Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, VGS =0 to 5 V
Qg(5)
-
35
55
Gate charge total
VDD = 40 V, ID = 47 A, VGS =0 to 10 V
Qg(total)
-
60
90
Gate plateau voltage
VDD = 40 V, ID = 47 A
V(plateau)
-
4.1
-
V


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