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BUZ101SL Datasheet(Fiches technique) 1 Page - Siemens Semiconductor Group

Numéro de pièce BUZ101SL
Description  SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
Télécharger  8 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ101SL Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
29/Jan/1998
BUZ 101 SL
SPP20N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 101 SL
55 V
20 A
0.07
TO-220 AB
Q67040-S4012-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
14
20
A
Pulsed drain current
TC = 25 °C
IDpuls
80
Avalanche energy, single pulse
ID = 20 A, VDD = 25 V, RGS = 25
L
= 450 µH, Tj = 25 °C
EAS
90
mJ
Avalanche current,limited by Tjmax
IAR
20
A
Avalanche energy,periodic limited by Tjmax
EAR
5.5
mJ
Reverse diode dv/dt
IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt
6
kV/µs
Gate source voltage
VGS
± 14
V
Power dissipation
TC = 25 °C
Ptot
55
W


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