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BUZ101 Fiches technique(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ101 Fiches technique(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • d v/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 50 V 29 A 0.06 Ω TO-220 AB C67078-S1350-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 31 °C ID 29 A Pulsed drain current TC = 25 °C IDpuls 116 Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C EAS 70 mJ Reverse diode d v/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C d v/dt 6 kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 100 W Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 1.5 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 175 / 56 |
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Description similaire - BUZ101 |
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