BUZ101 datasheet(1/9 Pages) SIEMENS

No de pièce	BUZ101

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

Download	9 Pages

Scroll/Zoom	100%

Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

Logo

1 / 9 page

Semiconductor Group

1

07/96

BUZ 101

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• d

v/dt rated

• Low on-resistance

• 175°C operating temperature

• also in TO-220 SMD available

Pin 1

Pin 2

Pin 3

G

D

S

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 101

50 V

29 A

0.06

Ω

TO-220 AB

C67078-S1350-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

TC = 31 °C

ID

29

A

Pulsed drain current

TC = 25 °C

IDpuls

116

Avalanche energy, single pulse

ID = 29 A, VDD = 25 V, RGS = 25 Ω

L = 83 µH, Tj = 25 °C

EAS

70

mJ

Reverse diode d

v/dt

IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

d

v/dt

6

kV/µs

Gate source voltage

VGS

± 20

V

Power dissipation

TC = 25 °C

Ptot

100

W

Operating temperature

Tj

-55 ... + 175

°C

Storage temperature

Tstg

-55 ... + 175

Thermal resistance, chip case

RthJC

≤ 1.5

K/W

Thermal resistance, chip to ambient

RthJA

≤ 75

DIN humidity category, DIN 40 040

E

IEC climatic category, DIN IEC 68-1

55 / 175 / 56

Numéro de pièce similaire - BUZ101

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	BUZ101	332Kb / 2P	isc N-Channel MOSFET Transistor
Siemens Semiconductor G...	BUZ101L	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
	BUZ101S	69Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ101SL	132Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

More results

Description similaire - BUZ101

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BUZ104	208Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ103	186Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ342	214Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)
	BUZ104L	209Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
	BUZ102	183Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ100	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ101S	69Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102AL	182Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

More results

BUZ101 Fiches technique(PDF) 1 Page - Siemens Semiconductor Group

BUZ101 Fiches technique(HTML) 1 Page - Siemens Semiconductor Group

Numéro de pièce similaire - BUZ101

Description similaire - BUZ101

Html Pages

1 2 3 4 5 6 7 8 9

Fiches technique Télécharger

Lien URL