Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

BUP314D Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

No de pièce BUP314D
Description  IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUP314D Fiches technique(HTML) 2 Page - Siemens Semiconductor Group

  BUP314D Datasheet HTML 1Page - Siemens Semiconductor Group BUP314D Datasheet HTML 2Page - Siemens Semiconductor Group BUP314D Datasheet HTML 3Page - Siemens Semiconductor Group BUP314D Datasheet HTML 4Page - Siemens Semiconductor Group BUP314D Datasheet HTML 5Page - Siemens Semiconductor Group BUP314D Datasheet HTML 6Page - Siemens Semiconductor Group BUP314D Datasheet HTML 7Page - Siemens Semiconductor Group BUP314D Datasheet HTML 8Page - Siemens Semiconductor Group BUP314D Datasheet HTML 9Page - Siemens Semiconductor Group  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
Semiconductor Group
2
Jul-30-1996
BUP 314D
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
RthJC
≤ 0.42
K/W
Diode thermal resistance, chip case
RthJCD
≤ 0.83
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.35 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 25 A, Tj = 25 °C
VGE = 15 V, IC = 25 A, Tj = 125 °C
VGE = 15 V, IC = 42 A, Tj = 25 °C
VGE = 15 V, IC = 42 A, Tj = 125 °C
VCE(sat)
-
-
-
-
4.3
3.4
3.3
2.7
-
-
3.9
3.2
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
ICES
-
-
0.8
mA
Gate-emitter leakage current
VGE = 25 V, VCE = 0 V
IGES
-
-
100
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 25 A
gfs
8.5
20
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
1650
2200
pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
250
380
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
110
160


Html Pages

1  2  3  4  5  6  7  8  9 


Fiches technique Télécharger

Go To PDF Page

Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
BUP305D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP306D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP307D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP400D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP410D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP602D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP603D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP200D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free 1  2  3  4  5  More Siemens Semiconductor Group
BUP313D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free 1  2  3  4  5  More Siemens Semiconductor Group
BUP307 IGBT Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated 1  2  3  4  5  More Siemens Semiconductor Group

Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn