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BUP313D Fiches technique(PDF) 3 Page - Siemens Semiconductor Group

No de pièce BUP313D
Description  IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUP313D Fiches technique(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
Dec-02-1996
BUP 313D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω
td(on)
-
70
100
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω
tr
-
45
70
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω
td(off)
-
400
530
Fall time
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω
tf
-
70
95
Free-Wheel Diode
Diode forward voltage
IF = 15 A, VGE = 0 V, Tj = 25 °C
IF = 15 A, VGE = 0 V, Tj = 125 °C
VF
-
-
1.7
2.2
-
2.8
V
Reverse recovery time
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
trr
-
-
100
-
150
-
ns
Reverse recovery charge
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
3
1
5.4
1.8
µC


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Numéro de composants électroniques

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BUP400D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
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BUP603D IGBT With Antiparallel Diode Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode 1  2  3  4  5  More Siemens Semiconductor Group
BUP307 IGBT Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated 1  2  3  4  5  More Siemens Semiconductor Group

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