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AD5114 Fiches technique(PDF) 5 Page - Analog Devices |
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AD5114 Fiches technique(HTML) 5 Page - Analog Devices |
5 / 16 page Data Sheet AD5116 Rev. 0 | Page 5 of 16 INTERFACE TIMING SPECIFICATIONS VDD = 2.3 V to 5.5 V; all specifications TMIN to TMAX, unless otherwise noted. Table 3. Parameter Test Conditions/Comments Min Typ Max Unit Description t1 8 ms Debounce time t2 1 sec Manual to auto scan time t3 140 ms Auto scan step t4 ASE = 0 V, PD = GND, PU = GND 1 sec Auto save execute time t5 ASE = VDD 8 ms Low pulse time to manual storage tEEPROM_PROGRAM1 15 50 ms Memory program time tPOWER_UP2 50 μs Power-on EEPROM restore time 1 EEPROM program time depends on the temperature and EEPROM write cycles. Higher timing is expected at a lower temperature and higher write cycles. 2 Maximum time after VDD is equal to 2.3 V. TIMING DIAGRAMS PU RW t1 PD (LOW) Figure 2. Manual Increment Mode Timing PU t1 t2 t3 PD (LOW) RW Figure 3. Auto Increment Mode Timing PD t1 t4 EEPROM DATA NEW DATA tEEPROM PROGRAM RW ASE (LOW) Figure 4. Auto Save Mode Timing PD/PU (LOW) t5 EEPROM DATA NEW DATA tEEPROM PROGRAM ASE Figure 5. Manual Save Mode Timing PD t1 RW RW = 45Ω ASE Figure 6. End Scale Indication Timing |
Numéro de pièce similaire - AD5114 |
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Description similaire - AD5114 |
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