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BTS720L1 Fiches technique(PDF) 4 Page - Siemens Semiconductor Group

No de pièce BTS720L1
Description  Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
Download  14 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS720L1 Fiches technique(HTML) 4 Page - Siemens Semiconductor Group

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BTS720L1
Parameter and Conditions, each of the four channels
Symbol
Values
Unit
at Tj = 25 °C,
Vbb = 12 V unless otherwise specified
min
typ
max
Semiconductor Group
Page 4
26.Feb.96
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB5),
Ta
= 85°C, Tj ≤ 150°C
IL(NOM)
2.5
3.8
5.9
2.9
4.3
6.3
--
A
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
IL(GNDhigh)
--
--
10
mA
Turn-on time
to 90%
VOUT:
Turn-off time
to 10%
VOUT:
RL = 12
, Tj =-40...+150°C
ton
toff
80
80
200
200
400
400
µs
Slew rate on
10 to 30%
VOUT, RL = 12
,
Tj =-40...+150°C:
d
V/dton
0.1
--
1
V/
µs
Slew rate off
70 to 40%
VOUT, RL = 12
,
Tj =-40...+150°C:
-d
V/dtoff
0.1
--
1
V/
µs
Operating Parameters
Operating voltage7)
Tj =-40...+150°C: Vbb(on)
5.0
--
24
V
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under)
3.5
--
5.0
V
Undervoltage restart
Tj =-40...+25°C:
Tj =+150°C:
Vbb(u rst)
--
--
5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+150°C:
Vbb(ucp)
--
5.6
7.0
V
Undervoltage hysteresis
∆V
bb(under) = Vbb(u rst) - Vbb(under)
∆V
bb(under)
--
0.2
--
V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
24
--
34
V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
23
--
--
V
Overvoltage hysteresis
Tj =-40...+150°C:
∆V
bb(over)
--
0.5
--
V
Overvoltage protection8)
Tj =-40...+150°C:
I bb = 40 mA
Vbb(AZ)
42
47
--
V
Standby current, all channels off
Tj =25°C:
VIN = 0
Tj =150°C:
Ibb(off)
--
--
28
44
60
70
µA
Leakage output current (included in
Ibb(off))
VIN = 0
IL(off)
--
--
12
µA
Operating current 9),
VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4,
one channel on:
four channels on:
IGND
--
--
2
8
3
12
mA
7)
At supply voltage increase up to
Vbb = 5.6 V typ without charge pump, VOUT Vbb - 2 V
8)
see also
VON(CL) in circuit diagram on page 8.
9
)
Add
IST, if IST > 0


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
BTS712N1 Smart Four Channel Highside Power Switch Overload protection Current limitation Short-circuit protection Thermal shutdown 1  2  3  4  5  More Siemens Semiconductor Group
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BTS711L1 Smart Four Channel Highside Power Switch Overload protection Current limitation Short-circuit protection Thermal shutdown 1  2  3  4  5  More Siemens Semiconductor Group
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