PROFET® BTS 432 E2

Semiconductor Group

1

04.96

Smart Highside Power Switch

Features

• Clamp of negative voltage at output

• Short-circuit protection

• Current limitation

• Thermal shutdown

• Diagnostic feedback

• Open load detection in ON-state

• CMOS compatible input

• Electrostatic discharge (ESD) protection

• Loss of ground and loss of V

2)

• Overvoltage protection

• Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Application

• µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection

functions.

+ Vbb

IN

ST

Signal GND

ESD

PROFET

®

OUT

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection

Short circuit

detection

Charge pump

Level shifter

Temperature

sensor

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

2

4

1

3

5

Load GND

Load

V

Logic

Overvoltage

protection

R

bb

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Product Summary

80

V

58

V

4.5 ... 42

V

-32

V

38

m

Ω

44

A

35

A

11

A

5