Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

BCX17 Datasheet(Fiches technique) 1 Page - Rohm

Numéro de pièce BCX17
Description  PNP small signal transistor
Télécharger  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
Logo ROHM - Rohm

BCX17 Datasheet(HTML) 1 Page - Rohm

  BCX17_11 Datasheet HTML 1Page - Rohm BCX17_11 Datenblatt HTML 2Page - Rohm BCX17_11 Datenblatt HTML 3Page - Rohm  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
1/2
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.B
PNP small signal transistor
BCX17
Small load switch transistor with high gain and Low saturation voltage.
Features
Dimensions (Unit : mm)
(1) High gain and low saturation voltage.
(2) Ideal for small load switching applications.
Complements the BCX19
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
BCX17
T116
3000
Type
Absolute maximum ratings (Ta=25
C)
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Collector power dissipation
Junction temperature
Storage temperature
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Parameter
VCES
VCEO
VEBO
PC
Tj
Tstg
−50
V
V
V
A
°C
°C
−45
−5
−0.5
IC
ICM
A
−1
0.2
0.35
W
W
150
−65 to 150
Symbol
Limits
Unit
∗2
0.425
W
Electrical characteristics (Ta=25
C)
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Parameter
Symbol
BVCES
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
ICBO
Min.
−50
−45
−5
100
200
−0.1
−10
−0.62
600
70
−−
−5
VIC
= −50
μA
IC
= −10mA
IE
= −50
μA
VCB
= −20V
VEB
= −5V
IC/IB
= −500mA/ −50mA
VCE
= −1V, IC= −100mA
VCE
= −1V, IC= −300mA
VCE
= −5V, IE= −20mA, f=100MHz
VCB
= −20V, Ta=150
°C
V
V
μA
μA
V
MHz
μA
Typ.
Max.
Unit
Conditions
VBE(on)
−1.2
VCE
/IC
= −1V/ −500mA
V
40
VCE
= −1V, IC= −500mA
Transition frequency
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
SST3
0.45
0.95
0.15
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : GT1


Html Pages

1  2  3 


Datasheet Download

Go To PDF Page


Lien URL



Privacy Policy
ALLDATASHEET.FR
AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicit   |   Contactez-nous   |   Politique de confidentialit   |   Echange de liens   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn