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BAY80 Datasheet(Fiches technique) 1 Page - Vishay Siliconix

Numéro de pièce BAY80
Description  Small Signal Switching Diode, High Voltage
Télécharger  4 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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BAY80
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-Jul-12
1
Document Number: 85553
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, High Voltage
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diode
• AEC-Q101 qualified
• Material categorization:
For
definitions
of
compliance
please
see
www.vishay.com/doc?99912
APPLICATIONS
• General purpose
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL CONSTRUCTION
REMARKS
BAY80
BAY80-TR or BAY80-TAP
BAY80
Single diode
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
VRRM
150
V
Reverse voltage
VR
120
V
Peak forward surge current
tp = 1 μs
IFSM
1A
Repetitive peak forward current
IFRM
625
mA
Forward continuous current
IF
250
mA
Average forward current
IF(AV)
200
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
350
K/W
Junction to ambient air
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C




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