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2SD1047 Datasheet(Fiches technique) 1 Page - Tiger Electronic Co.,Ltd

Numéro de pièce 2SD1047
Description  Complementary Silicon Power Ttransistors
Télécharger  1 Pages
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Fabricant  TGS [Tiger Electronic Co.,Ltd]
Site Internet  http://www.tgselec.com
Logo TGS - Tiger Electronic Co.,Ltd

2SD1047 Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd

  2SD1047 Datasheet HTML 1Page - Tiger Electronic Co.,Ltd  
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Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
140
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
12
A
Base Current
IB
1.2
A
Total Dissipation at
Ptot
100
W
Max. Operating Junction Temperature
Tj
150
oC
Storage Temperature
Tstg
-55~150
oC
2SD1047 / 2SB817
DESCRIPTION
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICEO
VCB=140V, IE=0
10
uA
Emitter Cut-off Current
IEBO
VEB=6V, IC=0
10
uA
Collector-Emitter Sustaining Voltage
VCEO
IC=30mA, IB=0
140
V
DC Current Gain
hFE1
VCE=5.0V, IC=1.0A
60
200
hFE2
VCE=5.0V, IC=6.0A
20
Collector-Emitter Saturation Voltage
VCE(sat)
IC=5.0A,IB=0.5A
2.5
V
Base-Emitter Voltage
VBE
VCE=5.0V,IC=1.0A
1.5
V
Current Gain Bandwidth Product
fT
VCE=5.0V,IC=1.0A
15
MHz
Collector Output Capacitance
COB
VCB=-10V, IE=0, f=1MHz
300
pF
Complementary Silicon Power Ttransistors
Product specification
It is intented for use in power
amplifier and switching applications.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
( Ta = 25 C)
O
TO-3PN
Note : hfe1 Classification D: 60~120, E: 100~200
TIGER ELECTRONIC CO.,LTD


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