BAS86 datasheet(2/4 Pages) VISHAY

No de pièce	BAS86

Description	Small Signal Schottky Diode

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Document Number 85511

Rev. 1.8, 13-Jan-11

BAS86

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Reverse breakdown voltage

IR = 10 µA (pulsed)

V(BR)

50

V

Leakage current

VR = 40 V

IR

5µA

Forward voltage

Pulse test tp < 300 µs,

IF = 0.1 mA, δ < 2 %

VF

200

300

mV

Pulse test tp < 300 µs,

IF = 1 mA, δ < 2 %

VF

275

380

mV

Pulse test tp < 300 µs,

IF = 10 mA, δ < 2 %

VF

365

450

mV

Pulse test tp < 300 µs,

IF = 30 mA, δ < 2 %

VF

460

600

mV

Pulse test tp < 300 µs,

IF = 100 mA, δ < 2 %

VF

700

900

mV

Diode capacitance

VR = 1 V, f = 1 MHz

CD

8pF

Reverse recovery time

IF = 10 mA, IR = 10 mA,

Irr = 1 mA,

trr

5ns

Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature

Figure 2. Reverse Current vs. Junction Temperature

15827

0

50

100

150

200

250

300

350

400

450

500

25

50

75

100

125

150

Tj - Junction Temperature (°C)

- Limit

at 100 %V

P

R

- Limit

at 80 %V

P

R

RthJA = 540 K/W

VR = 50 V

1

10

100

1000

10000

25

50

75

100

125

150

15828

Tj - Junction Temperature (°C)

VR = VRRM

Figure 3. Forward Current vs. Forward Voltage

Figure 4. Diode Capacitance vs. Reverse Voltage

15829

0

0.5

1.0

1.5

0.1

1

10

100

1000

VF - Forward Voltage (V)

Tj = 25 °C

Tj = 125 °C

15830

0

1

2

3

4

5

6

7

8

9

10

0.1

1

10

100

f = 1 MHz

VR - Reverse Voltage (V)

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