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BAS86 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BAS86 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85511 Rev. 1.8, 13-Jan-11 BAS86 Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min. Typ. Max. Unit Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 50 V Leakage current VR = 40 V IR 5µA Forward voltage Pulse test tp < 300 µs, IF = 0.1 mA, δ < 2 % VF 200 300 mV Pulse test tp < 300 µs, IF = 1 mA, δ < 2 % VF 275 380 mV Pulse test tp < 300 µs, IF = 10 mA, δ < 2 % VF 365 450 mV Pulse test tp < 300 µs, IF = 30 mA, δ < 2 % VF 460 600 mV Pulse test tp < 300 µs, IF = 100 mA, δ < 2 % VF 700 900 mV Diode capacitance VR = 1 V, f = 1 MHz CD 8pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5ns Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Reverse Current vs. Junction Temperature 15827 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 Tj - Junction Temperature (°C) - Limit at 100 %V P R R - Limit at 80 %V P R R RthJA = 540 K/W VR = 50 V 1 10 100 1000 10000 25 50 75 100 125 150 15828 Tj - Junction Temperature (°C) VR = VRRM Figure 3. Forward Current vs. Forward Voltage Figure 4. Diode Capacitance vs. Reverse Voltage 15829 0 0.5 1.0 1.5 0.1 1 10 100 1000 VF - Forward Voltage (V) Tj = 25 °C Tj = 125 °C 15830 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 f = 1 MHz VR - Reverse Voltage (V) |
Numéro de pièce similaire - BAS86 |
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Description similaire - BAS86 |
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