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BFP280W Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

No de pièce BFP280W
Description  NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Download  7 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFP280W Fiches technique(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Dec-12-1996
BFP 280W
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
8
-
-
V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
ICES
-
-
100
µA
Collector-base cutoff current
VCB = 8 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO
-
-
1
µA
DC current gain
IC = 3 mA, VCE = 5 V
hFE
30
100
200
-


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