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BFP182W Fiches technique(PDF) 1 Page - Siemens Semiconductor Group |
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BFP182W Fiches technique(HTML) 1 Page - Siemens Semiconductor Group |
1 / 7 page Semiconductor Group 1 Dec-12-1996 BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation TS ≤ 91 °C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 235 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
Numéro de pièce similaire - BFP182W |
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Description similaire - BFP182W |
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