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BF720 Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

No de pièce BF720
Description  NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF720 Fiches technique(HTML) 2 Page - Siemens Semiconductor Group

  BF720 Datasheet HTML 1Page - Siemens Semiconductor Group BF720 Datasheet HTML 2Page - Siemens Semiconductor Group BF720 Datasheet HTML 3Page - Siemens Semiconductor Group BF720 Datasheet HTML 4Page - Siemens Semiconductor Group  
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Semiconductor Group
2
BF 720
BF 722
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 25 mA, VCE = 20 V
hFE
50
nA
µA
Collector-emitter cutoff current
VCE = 200 V, RBE = 2.7 k
VCE = 200 V, RBE = 2.7 k
Ω, TA = 150 ˚C
ICER
50
10
Collector-emitter breakdown voltage
IC = 10
µA, RBE = 2.7 k
BF 720
V(BR)CER
300
V
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BF 722
V(BR)CE0
250
nA
Collector-base cutoff current
VCB = 200 V, IE = 0
ICB0
––10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA, IB = 0
BF 720
BF 722
V(BR)CB0
300
250
Emitter-base breakdown voltage
IE = 10
µA, IC = 0
V(BR)EB0
5––
V
Collector-emitter saturation voltage1)
IC = 30 mA, IB = 5 mA
VCEsat
0.6
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEB0
––10
MHz
Transition frequency
IC = 10 mA, VCE = 10 V, f = 100 MHz
fT
100
AC characteristics
pF
Collector-base capacitance
VCB = 30 V, IC = 0, f = 1 MHz
Cobo
0.8
1)
Pulse test conditions: t
300 µs, D = 2 %.


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