BF414 datasheet(1/2 Pages) SIEMENS

No de pièce	BF414

Description	NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)

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BF 414

Semiconductor Group

1

NPN Silicon RF Transistor

BF 414

q

For low-noise, common base

VHF and FM stages

1

3

2

Maximum Ratings

Type

Ordering Code

Marking

Package1)

Pin Configuration

BF 414

Q62702-F517

–

TO-92

1

2

3

C

B

E

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE0

30

V

Collector-base voltage

VCB0

40

Emitter-base voltage

VEB0

4

Thermal Resistance

Junction - ambient

Rth JA

≤ 350

K/W

Collector current

IC

25

mA

Base current

IB

3

Total power dissipation, TA

≤ 45 ˚C

Ptot

300

mW

Junction temperature

Tj

150

˚C

Storage temperature range

Tstg

– 55 … + 150

1)

For detailed information see chapter Package Outlines.

Numéro de pièce similaire - BF414

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BF410	54Kb / 3P	LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
NXP Semiconductors	BF410A	36Kb / 6P	N-channel silicon field-effect transistors December 1990
Siemens Semiconductor G...	BF410A	54Kb / 3P	LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
NXP Semiconductors	BF410B	36Kb / 6P	N-channel silicon field-effect transistors December 1990
Siemens Semiconductor G...	BF410B	54Kb / 3P	LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

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Description similaire - BF414

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